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The RBQ20BGE65ATL is a Schottky barrier diode manufactured by Rohm Semiconductor. It features a common cathode configuration housed in a TO-252AA (D-Pak) surface-mount package. The device is rated for a maximum repetitive reverse voltage of 65V and an average rectified forward current of 20A. Key electrical specifications include a maximum forward voltage of 0.71V at 10A and a maximum reverse leakage current of 0.1mA at 65V. The component supports a peak forward surge current of 80A and operates within a junction temperature range up to 150°C, with storage temperatures spanning from -55°C to 150°C.
Verify the specific suffix 'ATL' against the manufacturer's official datasheet to confirm tape-and-reel packaging quantities and marking codes. Ensure the selected variant matches the required RoHS compliance status and lead-free manufacturing standards specified in the latest product documentation before finalizing procurement orders.
Select this component when a 65V rating and 20A continuous current capacity are required in a compact surface-mount form factor. Compare the 0.71V forward voltage drop against system efficiency targets. Verify that the TO-252AA footprint aligns with the PCB layout constraints and thermal dissipation requirements of the target application design.
This part belongs to the RBQ BGE series of high-efficiency Schottky barrier diodes from Rohm Semiconductor. The series is engineered to improve the trade-off between conduction losses and reverse leakage characteristics. These devices are intended for general-purpose rectification in modern power electronics where size and thermal performance are critical design parameters.
Consult the official Rohm replacement guide for direct equivalents. Verify pinout compatibility and thermal resistance values when substituting with other manufacturers' 65V 20A Schottky diodes in the D-Pak package.