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The RBQ20BM100ATL is a Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 surface-mount package. It features a dual anode common cathode configuration with silicon technology. Key electrical parameters include a repetitive reverse voltage of 100 V and an average forward current of 20 A. The device exhibits a maximum forward voltage of 690 mV at 10 A and a maximum reverse current of 200 uA at 100 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 C.
Verify the specific suffix 'ATL' against the manufacturer's official datasheet to confirm packaging details such as reel size or tape specifications. Ensure the component meets the required AEC-Q101 automotive qualification standards for your target application environment. Cross-reference the RoHS compliance status with the latest regulatory documentation provided by ROHM Semiconductor before finalizing procurement orders.
Select this component when a 100 V rating and 20 A continuous current capacity are required in a compact TO-252-3 footprint. The dual anode common cathode structure allows for efficient use of board space in bridge or synchronous rectifier topologies. Consider the 690 mV forward voltage drop for thermal management calculations in high-current scenarios within automotive environments.
This part belongs to the RBQ20BM series of Schottky barrier diodes designed for automotive applications. The series emphasizes low reverse current and high reliability under strict automotive standards. The TO-252-3 package provides robust surface-mount capabilities suitable for automated assembly processes in high-volume manufacturing environments.
The RBQ20BM100A is listed as an alias for this part number. Verify pinout compatibility and electrical tolerances if substituting with other 100 V, 20 A dual Schottky diodes from different manufacturers.