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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 65V 10A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：65 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：690 mV @ 10 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：140 µA @ 65 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：-
- Qualification：-
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Overview
The RBQ20NS65ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 65 V and an average forward current rating of 20 A. The device exhibits a typical forward voltage of 0.69 V at 10 A and a maximum reverse current of 140 uA at 65 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 C.
Feature Summary
- Dual anode common cathode configuration for bridge rectifier applications
- Low reverse leakage current characteristics
- High thermal stability with elevated maximum junction temperature capability
Applications
- AC/DC converter circuits
- Free-wheeling diodes in switching power supplies
- General-purpose rectification in industrial equipment
Procurement Notes
Verify the specific suffix against official documentation to confirm package type and tape/reel specifications. Ensure the component meets required automotive or industrial qualification standards if applicable. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability and authenticity before procurement.
Selection Notes
Select this component for designs requiring a 65 V blocking voltage and 20 A continuous current in a compact surface-mount form factor. The dual anode structure simplifies circuit layout for full-wave rectification. Evaluate thermal management requirements based on the TO-263S package's heat dissipation capabilities relative to the expected operating conditions.
Part Context
This component belongs to ROHM's RBQ series of high-efficiency Schottky barrier diodes designed for low forward voltage and low reverse current performance. The series targets power supply applications where efficiency and reliability are critical. The TO-263S package provides a balance between current handling capacity and board space optimization compared to through-hole alternatives.
Replacement Considerations
Direct substitutes include the RBQ20NS65AFHTL, which shares identical electrical specifications but may differ in packaging format. Verify pinout compatibility and thermal resistance values when replacing components from other manufacturers.
