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The RBQ30NS100ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for general rectification and automotive applications. It features a dual anode common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. The device supports a repetitive reverse voltage of 100 V and an average forward current of 30 A. Key electrical parameters include a maximum forward voltage of 770 mV at 15 A, a peak forward surge current of 100 A, and a low reverse current of 200 uA at 100 V. It operates within a junction temperature range up to +150 °C and holds AEC-Q101 qualification.
Verify the specific suffix 'TL' against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Ensure the component meets AEC-Q101 requirements if used in automotive contexts. Cross-reference the datasheet for thermal management guidelines given the TO-263S package constraints. Confirm RoHS compliance status with the latest product release notes before finalizing procurement orders.
Select this component when a 100 V rated Schottky diode with 30 A continuous current capability is required in a surface-mount format. The dual anode common cathode structure allows for use in bridge configurations or synchronous rectification setups. Consider the 770 mV forward voltage drop for thermal design purposes. Verify that the TO-263S footprint matches the target PCB layout constraints.
This part belongs to ROHM's RBQ series of automotive-grade Schottky barrier diodes. It shares the same electrical ratings as the RBQ30NS100AFHTL but differs in packaging type. The series is engineered for high reliability in harsh environments, distinguishing it from standard industrial diodes through rigorous automotive qualification standards.
The RBQ30NS100AFHTL serves as a direct functional substitute with identical electrical specifications, differing only in the trailing packaging suffix which indicates reel versus cut-tape availability.