RBQ30NS65AFHTL

RBQ30NS65AFHTL

$1.70
  • Description:DIODE ARRAY SCHOTT 65V 30A LPDS
  • Series:-

SKU:9520ba41fd36 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY SCHOTT 65V 30A LPDS
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):65 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:690 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):16.1 ns
  • Current - Reverse Leakage @ Vr:450 µA @ 65 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:LPDS
  • Grade:Automotive
  • Qualification:AEC-Q101

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RBQ30NS65AFHTL

Overview

The RBQ30NS65AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 65V and an average rectified forward current of 30A. Key electrical parameters include a maximum forward voltage of 690mV at 15A, a peak forward surge current of 100A, and a maximum reverse current of 200µA at 65V. It operates within a junction temperature range up to +150°C and meets AEC-Q101 automotive qualification standards.

Feature Summary

  • Dual anode common cathode configuration for flexible circuit integration
  • Automotive-grade reliability compliant with AEC-Q101 standards
  • Optimized balance between low forward voltage and low reverse leakage current

Applications

  • General rectification in automotive electronic systems
  • Freewheeling diodes in DC-DC converter circuits
  • Reverse polarity protection in vehicle power distribution

Procurement Notes

Verify the specific suffix AFHTL against the manufacturer datasheet to confirm the tape-and-reel packaging format and lead-free plating specifications. Ensure the ordering quantity aligns with the standard reel size of 1000 units if bulk procurement is intended. Cross-reference the RoHS compliance status with the latest environmental declaration provided by ROHM Semiconductor prior to finalizing purchase orders.

Selection Notes

Select this component when designing circuits requiring a 65V rating with high current handling capabilities in a compact surface-mount footprint. The dual anode structure allows for efficient use of board space compared to single diodes. Consider the thermal performance of the TO-263S package and ensure adequate PCB copper area for heat dissipation to maintain junction temperatures within the specified limits during continuous operation.

Part Context

This part belongs to the RBQ series of high-efficiency Schottky barrier diodes from ROHM Semiconductor. The series is characterized by its focus on reducing power loss through low forward voltage drops while maintaining low reverse leakage currents. These devices are engineered for high reliability in demanding environments, specifically targeting automotive applications where strict quality and longevity standards are mandatory.

Replacement Considerations

Direct substitutes within the same family include RBQ30NS65AFH (leaded version) or RBQ30NS100AFHTL (higher voltage variant). Verify pin compatibility and thermal characteristics before substitution. Other manufacturers' equivalents must be evaluated for matching voltage, current, and package dimensions.

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