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The RBQ30T65ANZC9 is a silicon Schottky barrier diode manufactured by Rohm Semiconductor, housed in a TO-220FN (3-pin) leaded package. It features a common cathode configuration with a maximum repetitive reverse voltage of 65V and an average rectified forward current rating of 30A. The device exhibits a maximum forward voltage of 0.69V at 15A and a maximum reverse leakage current of 0.45mA at 65V. It supports a junction temperature up to 150°C and operates within a storage temperature range of -40°C to 150°C.
Verify the specific suffix C9 against official documentation to confirm package and tape/reel specifications. Confirm RoHS compliance status as required by project standards. Check supply status carefully, as this component may be designated for existing customers only and not recommended for new designs. Ensure thermal management aligns with the 150°C junction temperature limit during operation.
Select this component when a 65V rated Schottky diode with high current capacity is required in a through-hole package. The low forward voltage drop contributes to improved efficiency in power conversion applications. Consider the common cathode arrangement if multiple diodes are needed in a single package footprint. Evaluate thermal dissipation requirements based on the 30A continuous current rating and package thermal resistance.
This part belongs to the RBQ series of high-efficiency Schottky barrier diodes from Rohm Semiconductor. The series is designed to balance low forward voltage and low reverse leakage current. The RBQ30T65ANZC9 specifically utilizes the TO-220FN package variant, offering robust mechanical mounting and heat dissipation capabilities compared to smaller surface-mount alternatives.
Check for direct pin-compatible substitutes within the same voltage and current ratings. Verify that any replacement maintains the common cathode configuration and similar thermal characteristics. Ensure the alternative component meets the same AEC-Q101 or general reliability standards if applicable to the target application environment.