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The RBR10BGE30ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-252 (DPAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 30 V and an average rectified forward current of 10 A. Key electrical parameters include a maximum forward voltage of 0.55 V at 5 A, a peak forward surge current of 50 A, and a maximum reverse current of 0.1 mA at 30 V. It operates within a junction temperature range up to +150 °C.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm package dimensions and tape/reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the application does not involve automotive use, as this standard-grade product is explicitly noted as unsuitable for such environments. Cross-reference the part number alias RBR10BGE30A during sourcing.
Select this component when a low forward voltage drop is critical for efficiency in 30 V systems requiring 10 A continuous current. The TO-252 package offers a balance between thermal performance and board space compared to larger through-hole options. Consider the dual common cathode topology if two independent rectification paths sharing a ground are needed within a single footprint.
This part belongs to ROHM's RBR10BGE series of Schottky barrier diodes designed for general-purpose applications. The series emphasizes low VF characteristics to enhance energy efficiency in power conversion circuits. The TO-252AA package code corresponds to the DPAK form factor, widely used in consumer electronics and industrial power supplies where moderate current handling and compact sizing are required.
The RBR10BGE60ATL serves as a pin-compatible alternative offering a higher 60 V reverse voltage rating while maintaining the same 10 A current capacity and package type.