RBR10BGE60ATL

RBR10BGE60ATL

$1.73
  • Description:DIODE ARR SCHOTT 60V 10A TO252GE
  • Series:-

SKU:d9f59c8cafaf Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE ARR SCHOTT 60V 10A TO252GE
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 µA @ 60 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252GE
  • Grade:-
  • Qualification:-

Download product information

RBR10BGE60ATL

Overview

The RBR10BGE60ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for surface-mount applications in the TO-252 (D-Pak) package. It features a common cathode configuration with three terminals. Key electrical specifications include a maximum repetitive reverse voltage of 60 V and an average rectified forward current of 10 A. The device supports a forward surge current of 50 A and exhibits a maximum forward voltage of 0.65 V at 5 A. Reverse leakage current is limited to 0.2 mA at 60 V. The junction temperature rating reaches 150 °C, with an operating range from -55 °C to 150 °C.

Feature Summary

  • Low forward voltage characteristic for improved efficiency
  • Common cathode dual anode configuration
  • High thermal stability with 150°C junction rating

Applications

  • Switching power supplies
  • General purpose rectification
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status and JEITA package code alignment with design requirements. Check supply status as product lifecycle stages may affect availability. Ensure the selected variant matches the required pinout and mounting style for PCB integration.

Selection Notes

Select this component for designs requiring a robust 10 A Schottky solution in a compact D-Pak footprint. The low forward voltage drop minimizes conduction losses compared to standard PN junctions. Verify that the 60 V reverse voltage rating provides sufficient margin for the target circuit's peak inverse voltage. Consider thermal management capabilities given the 150 °C maximum junction temperature specification.

Part Context

This part belongs to ROHM's RBR series of silicon Schottky barrier diodes, optimized for high-efficiency power conversion. The 'GE' suffix typically denotes a specific generation or package variation within the lineup, often associated with lead-free and halogen-free manufacturing processes. These devices are engineered to replace older generations while maintaining pin compatibility for easier design upgrades.

Replacement Considerations

The RBR10BM60A is listed as a similar level replacement with the same pinout and package. Verify if the BM variant meets all thermal and electrical requirements before substitution.

RBR10BGE60ATLRBR10BGE60ATL
$1.73
Buy Now