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The RBR10BGE60ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for surface-mount applications in the TO-252 (D-Pak) package. It features a common cathode configuration with three terminals. Key electrical specifications include a maximum repetitive reverse voltage of 60 V and an average rectified forward current of 10 A. The device supports a forward surge current of 50 A and exhibits a maximum forward voltage of 0.65 V at 5 A. Reverse leakage current is limited to 0.2 mA at 60 V. The junction temperature rating reaches 150 °C, with an operating range from -55 °C to 150 °C.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status and JEITA package code alignment with design requirements. Check supply status as product lifecycle stages may affect availability. Ensure the selected variant matches the required pinout and mounting style for PCB integration.
Select this component for designs requiring a robust 10 A Schottky solution in a compact D-Pak footprint. The low forward voltage drop minimizes conduction losses compared to standard PN junctions. Verify that the 60 V reverse voltage rating provides sufficient margin for the target circuit's peak inverse voltage. Consider thermal management capabilities given the 150 °C maximum junction temperature specification.
This part belongs to ROHM's RBR series of silicon Schottky barrier diodes, optimized for high-efficiency power conversion. The 'GE' suffix typically denotes a specific generation or package variation within the lineup, often associated with lead-free and halogen-free manufacturing processes. These devices are engineered to replace older generations while maintaining pin compatibility for easier design upgrades.
The RBR10BM60A is listed as a similar level replacement with the same pinout and package. Verify if the BM variant meets all thermal and electrical requirements before substitution.