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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 30V 5A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io) (per Diode)：5A
- Voltage - Forward (Vf) (Max) @ If：550 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：100 µA @ 30 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：-
- Qualification：-
Download product information
Overview
The RBR10BM30ATL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a TO-252 (DPAK) surface-mount package with a cathode common dual configuration. The device supports a repetitive peak reverse voltage of 30V and an average forward rectified current of 10A per diode. Key electrical characteristics include a maximum forward voltage of 0.55V at 5A, a non-repetitive surge forward current of 50A, and a maximum junction temperature of 150°C. The component is designed for general rectification applications.
Feature Summary
- Power mold type construction in a TO-252 surface-mount package
- Cathode common dual configuration for efficient circuit design
- Low forward voltage drop to minimize power loss
- High reliability suitable for general rectification purposes
Applications
- General rectification circuits
- Switching power supply designs
- DC-DC converter stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel quantities. Ensure that the procurement channel provides valid traceability and authenticity guarantees. Cross-reference the part number with the latest datasheet revisions to confirm compliance with current environmental standards and RoHS directives before finalizing orders.
Selection Notes
Select this component when a low forward voltage drop is required for high-efficiency rectification in surface-mount designs. The TO-252 package accommodates currents up to 10A, making it suitable for moderate power applications. Verify thermal management requirements based on the specified junction-to-case thermal resistance and derating curves provided in the technical specifications.
Part Context
This component belongs to the RBR10BM series of Schottky barrier diodes from ROHM Semiconductor. The series utilizes silicon epitaxial planar technology to achieve high reliability and low forward voltage characteristics. These devices are engineered for robust performance in general-purpose rectification tasks within electronic equipment.
Replacement Considerations
RBR10BGE30A
FAQ
What is the thermal resistance from junction to case?
The thermal resistance from junction to case is 6 °C/W.
Does the device support automotive grade qualification?
No, the RBR10BM30ATL is not AEC-Q101 qualified; it is intended for general electronic equipment.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
