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The RBR10NS40AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a 40 V repetitive peak reverse voltage rating and a 10 A average rectified forward current per diode. The device exhibits a maximum forward voltage of 620 mV at 5 A and a maximum reverse leakage current of 120 µA at 40 V. It supports a 50 A non-repetitive forward surge current and operates within a junction temperature range up to +150 °C. This component holds AEC-Q101 qualification for automotive applications.
Verify the complete part number including the suffix against official ROHM documentation to ensure correct packaging and tape specifications. Confirm that the requested quantity aligns with the manufacturer's minimum packing requirements. Check for any specific handling instructions related to the surface-mount technology package during assembly processes.
Select this component when a dual Schottky diode with low forward voltage drop is required for automotive-grade applications. The TO-263S package provides adequate thermal performance for moderate current levels. Ensure the system voltage does not exceed the 40 V reverse voltage rating under all operating conditions.
This device belongs to the RBR series of Schottky barrier diodes designed specifically for automotive use. The series emphasizes high reliability and low forward voltage to improve efficiency in power conversion circuits. The TO-263S package allows for direct mounting on printed circuit boards while providing a thermal path through the exposed pad.
The RBR10NS40AFH is listed as a similar level part with the same package but without the reel suffix specification in some contexts. Verify electrical parameters and packaging type before substitution.