RBR10T30ANZC9

Overview

The RBR10T30ANZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-efficiency rectification in power supply applications. It features a dual anode common cathode configuration housed in a TO-220FN-3 through-hole package. Key electrical parameters include a maximum repetitive reverse voltage of 30 V and an average forward current rating of 10 A. The device exhibits a low forward voltage drop of 550 mV at 5 A and supports a surge current of 50 A. It operates with a maximum junction temperature of +150 °C and maintains a low reverse leakage current of 100 µA.

Feature Summary

• Dual anode common cathode configuration enables flexible circuit topologies such as full-wave rectification without requiring a center-tapped transformer.
• Low forward voltage characteristic reduces conduction losses and improves overall system efficiency during operation.
• High thermal stability allows reliable performance at elevated junction temperatures up to +150 °C.

Applications

• DC-DC converter output rectification
• Free-wheeling diodes in switching power supplies
• General-purpose rectification in low-voltage power circuits

Procurement Notes

Verify the specific suffix C9 against the official datasheet to confirm the exact packaging type and tape/reel specifications. Ensure the ordering part number matches the required RoHS compliance status and lead time requirements. Cross-reference the manufacturer's latest documentation to confirm availability status, as production lifecycles may change. Confirm that the TO-220FN-3 package dimensions align with your PCB footprint constraints before finalizing procurement.

Selection Notes

Select this component when a dual-diode arrangement is required in a single package to save board space. The 30 V rating suits low-voltage DC outputs, while the 10 A current capacity handles moderate load demands. Compare the forward voltage drop against alternatives to optimize thermal management. Ensure the through-hole mounting style fits the assembly process. Verify that the surge current capability meets the inrush requirements of the target application.

Part Context

This part belongs to ROHM's RBR series of Schottky barrier diodes, which are engineered for low forward voltage and high reliability. The series utilizes silicon technology to provide robust performance in various rectification roles. The RBR10T30ANZC9 specifically targets applications needing dual configurations in a standard through-hole form factor, balancing electrical performance with ease of integration into legacy or new designs.

Replacement Considerations

The RBR10T30ANZ is listed as an alias or similar level part with the same pinout and package. Verify if the 'C9' suffix denotes a specific packaging variation rather than a functional difference. Check datasheets for equivalent parts from other manufacturers ensuring matching voltage, current, and package dimensions.

FAQ

What is the configuration of the RBR10T30ANZC9?

It is a dual anode common cathode Schottky barrier diode.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.

Does this component require a center-tapped transformer for full-wave rectification?

No, the dual anode common cathode configuration allows it to function as a full-wave rectifier without a center-tapped transformer.