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The RBR10T40ANZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for through-hole mounting in a TO-220FN-3 package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 40V and an average forward current rating of 10A. The device exhibits a low forward voltage drop of approximately 550mV at rated current and supports a forward surge current of 60A. Operating temperatures range from -55°C to +150°C junction temperature, ensuring reliability in high-temperature environments.
Verify the specific suffix C9 indicates tube packaging when sourcing. Confirm RoHS compliance status via the official datasheet before integration. Ensure the TO-220FN-3 footprint matches the target PCB design. Check for end-of-life notices as this series may be subject to production changes.
Select this component for applications requiring a 40V blocking voltage and 10A continuous current capability. The common cathode arrangement simplifies circuit topology compared to discrete pairs. Consider thermal management requirements given the 150°C junction limit. Compare forward voltage specifications against alternative Schottky devices for optimal efficiency.
This part belongs to ROHM's RBR series of Schottky barrier diodes, which are engineered for low loss and high reliability. The series utilizes silicon technology optimized for fast switching and low leakage current. The TO-220FN package provides robust mechanical stability and efficient heat dissipation for power electronics.
Direct substitutes include the RB215T-40HZ and RBR20T40ANZ, though current ratings differ. Verify pin compatibility and thermal resistance values when cross-referencing. Ensure voltage and current derating factors align with the new component's specifications.