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The RBR15BGE30ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252 (DPAK) surface-mount package. It features a common cathode dual configuration with a maximum repetitive reverse voltage of 30V and an average rectified forward current rating of 15A. The device exhibits a low forward voltage of 510mV at 7.5A and supports a forward surge current of 100A. It operates within a junction temperature range up to +150°C and holds AEC-Q101 automotive qualification.
Verify the specific ordering suffix against official ROHM documentation to confirm packaging details and compliance status. Ensure the component meets the required automotive qualification standards for the intended application environment. Cross-reference the datasheet revision date to validate technical specifications before integration into design projects.
Select this component for applications requiring high current handling in a compact surface-mount form factor. The common cathode arrangement simplifies circuit topology for synchronous rectification or freewheeling roles. Consider the thermal performance and package size when designing heat dissipation strategies for dense PCB layouts.
This part belongs to the RBR15B series of Schottky barrier diodes from ROHM Semiconductor. The series is designed for general-purpose rectification and switching applications. The TO-252 package provides a balance between current capacity and board space efficiency, suitable for various industrial and consumer electronics.
The RBR15BM30AFHTL serves as a direct replacement with identical pinout and electrical characteristics. Verify that the alternative package variant meets the same mechanical and thermal requirements for the specific design implementation.