RBR20BGE40ATL

$2.05

Description：DIODE ARR SCHOTT 40V 20A TO252GE
Series：-

SKU:330ebe4dcdc8 Category: Diode Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE ARR SCHOTT 40V 20A TO252GE
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：40 V
Current - Average Rectified (Io) (per Diode)：20A
Voltage - Forward (Vf) (Max) @ If：550 mV @ 10 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：360 µA @ 40 V
Operating Temperature - Junction：150°C
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252GE
Grade：-
Qualification：-

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RBR20BGE40ATL

Overview

The RBR20BGE40ATL is a Schottky barrier diode manufactured by ROHM Semiconductor, featuring a dual anode common cathode configuration in a TO-252GE (D-Pak) surface-mount package. It supports a maximum repetitive reverse voltage of 40 V and an average rectified forward current of 20 A. The device exhibits a low forward voltage of 0.55 V at 10 A and handles a surge current of 100 A. Operating junction temperature reaches +150 °C with a storage range from -55 °C to +150 °C.

Feature Summary

Dual anode common cathode configuration for flexible circuit integration
Low forward voltage characteristic to minimize conduction losses
High thermal stability with a maximum operating junction temperature of +150 °C

Applications

Switching power supplies
General-purpose rectification circuits

Procurement Notes

Verify the specific suffix 'ATL' against official ROHM documentation to confirm tape-and-reel packaging details. Ensure the component grade matches standard industrial requirements, as automotive-grade variants are explicitly excluded. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring a 40 V rating with 20 A continuous current handling in a compact D-Pak footprint. The low forward voltage makes it suitable for efficiency-critical designs. Confirm that the application environment remains within the specified temperature limits and does not require automotive qualification standards.

Part Context

This part belongs to the RBR series of Schottky barrier diodes designed for general rectification and switching applications. It utilizes silicon technology and offers a robust surface-mount solution. The series emphasizes low forward voltage and high reliability for standard electronic equipment where automotive certification is not mandated.