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The RBR20BM30AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-252-3 (DPAK) surface-mount package. The device supports a repetitive reverse voltage of 30 V and an average rectified forward current of 20 A. Key electrical parameters include a maximum forward voltage of 550 mV at 10 A, a peak forward surge current of 50 A, and a maximum reverse current of 100 uA. It operates up to a junction temperature of +150 C and meets AEC-Q101 automotive qualification standards.
Verify the complete part number including the suffix HTL to ensure correct packaging format. Confirm that the TO-252-3 footprint matches the target PCB layout. Check for RoHS compliance status as indicated in official documentation. Ensure storage conditions remain within specified limits to maintain component integrity prior to assembly.
Select this component when a 30 V rating and 20 A continuous current capacity are required in a DPAK package. Consider the dual common cathode topology if multiple rectification paths are needed from a single package. Evaluate the 550 mV forward voltage drop against system efficiency requirements. Verify compatibility with automated surface-mount assembly processes due to the SMD/SMT mounting style.
This device belongs to ROHM's RBR series of automotive-grade Schottky barrier diodes. The series is characterized by high reliability and low forward voltage, specifically tailored for automotive electronics. The RBR20BM30AFHTL variant utilizes the TO-252-3 package, offering a balance between current handling capability and compact surface-mount form factor compared to larger through-hole alternatives.
Publicly confirmed substitute part numbers were not identified in the provided source material. Cross-reference with ROHM internal replacement lists or consult manufacturer technical support for verified equivalents.