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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 30V 10A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：550 mV @ 10 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：200 µA @ 30 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：-
- Qualification：-
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Overview
The RBR20NS30ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 30 V and an average rectified forward current of 20 A. The device exhibits a low forward voltage of 550 mV at 10 A and supports a forward surge current of 100 A. It operates up to a junction temperature of +150 °C and has a maximum reverse leakage current of 200 µA.
Feature Summary
- Dual anode common cathode configuration for efficient circuit design
- Low forward voltage characteristic to minimize power loss
- High thermal stability with a maximum operating junction temperature of +150 °C
Applications
- General purpose rectification in switching power supplies
- DC-DC converter output rectification
- Free-wheeling diodes in inductive load circuits
Procurement Notes
Verify the specific suffix 'ATL' against the manufacturer's datasheet to confirm tape-and-reel packaging details and quantity per reel. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the part number with official ROHM documentation to validate electrical parameters before integration into final designs.
Selection Notes
Select this component when a 30 V rating and 20 A continuous current capacity are required in a D2PAK footprint. The low forward voltage makes it suitable for applications prioritizing efficiency. Consider the thermal resistance of the TO-263S package for heat dissipation planning in high-current scenarios.
Part Context
This part belongs to the RBR series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and fast switching capabilities. The RBR20NS30ATL specifically targets general-purpose rectification needs where compact surface-mount packaging and high current handling are essential.
Replacement Considerations
Direct substitutes include RBR20NS30AFHTL and RBR20NS30A, which share similar electrical specifications and package types. Verify pinout compatibility and thermal characteristics before substitution.
