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The RBR20NS40ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 40V and an average rectified forward current of 20A. The device exhibits a low forward voltage of 0.62V at 10A and supports a peak forward surge current of 100A. Operating temperatures range from -55°C to +150°C junction temperature.
Verify the specific suffix 'TL' against official documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard TO-263AB footprints during PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement orders.
Select this component for applications requiring moderate current handling with low voltage drop characteristics. The TO-263S package provides adequate thermal dissipation for general-purpose designs. Consider the 40V rating margin relative to circuit operating voltages to ensure reliable blocking performance under transient conditions.
This part belongs to the RBR20NS series of Schottky barrier diodes designed for general rectification. It shares the same package and basic electrical architecture as higher-current variants like the RBR40NS series but offers reduced current capacity suitable for lower-power applications.
The RBR20NS40A is listed as an alias or equivalent part number. Verify pinout and thermal pad connectivity when substituting to ensure mechanical and electrical compatibility without redesigning the footprint.