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The RBR20NS60ATL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for general rectification applications. It features a dual anode common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 60 V and an average rectified forward current of 40 A. Key electrical parameters include a maximum forward voltage of 0.6 V at 20 A and a maximum reverse current of 0.8 mA at 60 V. It withstands a forward surge current of 100 A and operates within a junction temperature range up to +150 °C.
Verify the specific suffix 'ATL' against the manufacturer's official datasheet to confirm tape-and-reel packaging details and exact binning specifications. Ensure the procurement documentation matches the required RoHS compliance status and automotive qualification requirements if applicable to the target application environment.
Select this component when a 60 V rating and 40 A continuous current capacity are required in a D2PAK package. Compare the 0.6 V forward voltage drop against alternative packages like TO-252 or TO-220 if thermal management constraints differ. Verify that the 100 A surge current capability meets the inrush requirements of the specific load circuit.
This part belongs to the RBR series of Schottky barrier diodes from ROHM Semiconductor. The series offers various voltage ratings and current capacities in surface-mount packages. The RBR20NS60ATL specifically addresses mid-power rectification needs where low forward voltage and high current density are prioritized over ultra-low leakage currents found in higher voltage variants.
Direct pin-compatible substitutes may include other ROHM parts with identical voltage and current ratings in the TO-263S package, such as the RBR30NS60A for higher current capacity. Cross-manufacturer replacements require verification of forward voltage curves and thermal resistance characteristics to ensure equivalent performance.