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The RBR20T30ANZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-220FN-3 through-hole package. It features a dual anode common cathode configuration with a 30 V repetitive reverse voltage rating and a 20 A average rectified forward current capability. The device exhibits a maximum forward voltage of 550 mV at 10 A and a maximum reverse current of 200 uA at 30 V. It supports a 100 A forward surge current and operates at junction temperatures up to +150 °C.
Verify the specific suffix C9 against the official datasheet to confirm the tube packaging format and RoHS compliance status. Ensure the ordering part number matches the exact electrical specifications required for the design. Cross-reference the manufacturer's latest documentation to confirm availability and any potential obsolescence notices before finalizing procurement plans.
Select this component when a through-hole solution with a common cathode topology is required for 30 V systems. The TO-220FN-3 package provides robust thermal performance for high-current applications. Compare the 20 A current rating and low forward voltage against alternative packages to ensure compatibility with the PCB layout and thermal management strategy.
This component belongs to ROHM's RBR series of automotive-grade Schottky barrier diodes designed for high-reliability power conversion. The series utilizes silicon technology to offer low forward voltage and fast switching characteristics. The TO-220FN-3 package is standard for through-hole mounting in industrial and automotive power electronics.
Public confirmed substitute part numbers are not available in the provided source material.