ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 40V 15A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io) (per Diode)：15A
- Voltage - Forward (Vf) (Max) @ If：620 mV @ 15 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：360 µA @ 40 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：-
- Qualification：-
Download product information
Overview
The RBR30NS40ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for general rectification applications. It features a dual common cathode configuration within a TO-263S (D2PAK) surface-mount package. Key electrical specifications include a maximum repetitive reverse voltage of 40V and an average rectified forward current of 30A per diode. The device exhibits a maximum forward voltage of 0.62V at 15A and supports a peak forward surge current of 100A. It operates with a maximum junction temperature of +150°C and complies with RoHS standards.
Feature Summary
- Dual common cathode configuration for efficient power management
- Low forward voltage characteristic to minimize conduction losses
- High thermal stability with a maximum junction temperature of 150°C
- Robust surge current handling capability for transient protection
Applications
- General purpose rectification circuits
- Power supply output stages
- Free-wheeling diodes in inductive load switching
Procurement Notes
Verify the specific suffix 'TL' indicates tape-and-reel packaging when ordering. Confirm that the application does not require automotive qualification, as this standard-grade product is explicitly noted as unsuitable for vehicle-mounted equipment. Ensure the design accounts for the 40V reverse voltage limit under all operating conditions.
Selection Notes
Select this component for non-automotive general rectification tasks requiring high current capacity in a compact surface-mount form factor. Compare against the RBR40NS40AFHTL if automotive AEC-Q101 qualification or lower forward voltage is required. Consider the RBR10NS40ATL for applications demanding lower current ratings but similar voltage characteristics.
Part Context
This part belongs to the RBR30NS series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by silicon epitaxial planar construction and is optimized for low forward voltage performance. It serves as a standard-grade alternative to automotive-qualified variants, targeting cost-sensitive industrial and consumer electronics markets where high reliability is needed without strict automotive certification requirements.
Replacement Considerations
The RBR40NS40AFHTL offers similar electrical performance but includes AEC-Q101 automotive qualification. For lower current needs, the RBR10NS40ATL provides a compatible pinout with reduced current handling. Direct substitution requires verifying that the application does not mandate automotive-grade reliability standards.
