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The RBR30NS60AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for automotive applications under the AEC-Q101 standard. It features a dual anode common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. Key electrical parameters include a maximum repetitive reverse voltage of 60 V and an average rectified forward current of 30 A. The device supports a peak forward surge current of 100 A and maintains a maximum junction temperature of +150 °C. Forward voltage is specified at 0.67 V when tested at 15 A, with a maximum reverse current of 0.6 mA at 60 V.
Verify the complete part number including the suffix HTL to confirm tape-and-reel packaging specifications. Confirm that the procurement channel sources directly from authorized distributors to ensure AEC-Q101 compliance. Check RoHS and REACH SVHC status against current regulatory requirements before integration into production assemblies.
Select this component when a 60 V rating and 30 A continuous current capacity are required in a D2PAK footprint. Ensure the application thermal management can support the 150 °C junction limit. Compare forward voltage drops against alternative packages if space constraints allow for different form factors.
This device belongs to the RBR series of automotive Schottky barrier diodes from ROHM Semiconductor. The series utilizes silicon technology to provide robust performance in harsh environments. The specific model integrates anti-whisker formation lead-free plating to meet stringent automotive material safety standards.
The part number alias RBR30NS60AFH represents the same functional device without the specific reel packaging designation. Verify pinout compatibility and thermal resistance values when substituting with other manufacturers' 60 V 30 A dual Schottky diodes in the TO-263 package.