SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RBR30T60ANZC9 is a Schottky barrier diode manufactured by ROHM Semiconductor, housed in an ITO-220AB package. It features a dual anode common cathode configuration with silicon technology. The device supports a repetitive reverse voltage of 60 V and an average forward current of 30 A. Forward voltage is specified at 550 mV to 670 mV depending on source data, with a maximum reverse current of 600 uA. It withstands a forward surge current of 100 A and operates up to +150 C.
Verify the specific datasheet version and manufacturer documentation before procurement. Confirm that the component meets all required electrical specifications for the target application. Check for any obsolescence notices or design diversion restrictions associated with this part number. Ensure compatibility with the intended mounting style and thermal management requirements.
Select this component based on its 60 V reverse voltage rating and 30 A forward current capacity. Consider the low forward voltage drop for efficiency optimization. Evaluate the thermal performance within the ITO-220AB package constraints. Compare against alternative Schottky diodes if higher voltage ratings or different configurations are needed.
This part belongs to ROHM's Schottky diode series designed for power management applications. It utilizes silicon technology to provide robust performance in high-current scenarios. The dual anode common cathode structure allows for efficient use in bridge rectifier or synchronous rectifier topologies.
Public confirmed substitute part numbers are not available in the provided documentation.