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The RBR40NS30AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration within a TO-263S (D2PAK) surface-mount package. The device supports a repetitive reverse voltage of 30V and an average rectified forward current of 40A. Key electrical parameters include a maximum forward voltage of 550mV at 20A, a peak forward surge current of 100A, and a maximum reverse current of 0.6mA at 30V. It operates with a junction temperature up to +150°C and complies with AEC-Q101 automotive standards.
Verify the specific suffix HTL against official datasheets to confirm reel packaging and quantity specifications. Ensure the component meets AEC-Q101 requirements for your target application. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and current availability status before finalizing procurement orders.
Select this component when a low forward voltage drop is critical for efficiency in 30V systems. The 40A current rating and TO-263S package provide suitable thermal management for moderate-to-high power density designs. Consider the dual common cathode configuration if bridging or synchronous rectification topologies are required within the circuit architecture.
This part belongs to the RBR40NS series of Schottky barrier diodes from ROHM Semiconductor. The series offers variants with different reverse voltage ratings, including 30V, 40V, and 60V options, all sharing similar current handling capabilities and package formats. These devices are engineered specifically for automotive and industrial applications demanding high reliability and low conduction losses.
Direct substitutes within the same family include RBR40NS40AFHTL (40V rating) and RBR40NS60AFHTL (60V rating). Verify that the alternative voltage rating exceeds the maximum circuit reverse voltage to ensure safe operation without compromising the current or thermal specifications.