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The RBR40NS60ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for general rectification and switching power supply applications. It features a dual anode common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. Key electrical parameters include a maximum repetitive reverse voltage of 60V, an average forward current rating of 40A, and a peak forward surge current capability of 100A. The device exhibits a low typical forward voltage of 600mV at 20A and a maximum reverse leakage current of 800µA at 60V. It supports a junction temperature up to +150°C and operates within a storage temperature range of -55°C to +150°C.
Verify the specific suffix 'ATL' against the manufacturer's official datasheet to confirm tape-and-reel packaging details and any distinct quality certifications. Ensure the ordering part number matches the exact electrical specifications required for the target application, as suffix variations may indicate different packaging or testing standards without altering core functionality.
Select this component when a 60V rated Schottky diode with high current handling is required in a D2PAK package. The dual common cathode arrangement allows for use in full-wave rectification or synchronous rectification topologies. Consider the thermal management requirements associated with the 40A continuous current rating and the 150°C maximum junction temperature limit during PCB layout.
This part belongs to the RBR40NS series of Schottky barrier diodes from ROHM Semiconductor. The series offers variants with different voltage ratings, including 30V, 40V, and 60V options, all sharing similar current handling capabilities and package styles. These devices are engineered to balance low forward voltage and low reverse leakage current for improved efficiency in power conversion systems.
Direct substitutes within the same family include RBR40NS60AFHTL and RBR40NS60A. Verify pinout compatibility and thermal characteristics before swapping. Other manufacturers' equivalents must be evaluated for matching voltage, current, and package dimensions.