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RBV810 is listed in the Bridge Rectifier range at ChipApex. The manufacturer field lists EIC SEMICONDUCTOR INC.. Its product description is BRIDGE RECT 1PHASE 1KV 8A RBV-25. Review the specifications below when checking this part for your BOM.
Bridge Rectifier specifications for RBV810
- Description：BRIDGE RECT 1PHASE 1KV 8A RBV-25
- Series：-
- Mfr：EIC SEMICONDUCTOR INC.
- Package：Bag
- Diode Type：Single Phase
- Technology：Standard
- Voltage - Peak Reverse (Max)：1 kV
- Current - Average Rectified (Io)：8:00 AM
- Voltage - Forward (Vf) (Max) @ If：1 V @ 4 A
- Current - Reverse Leakage @ Vr：10 µA @ 1000 V
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：4-SIP, RBV-25
- Supplier Device Package：RBV-25
- Grade：-
- Qualification：-
Bridge Rectifier datasheet and documents for RBV810
Bridge Rectifier Overview
The RBV810 is a silicon bridge rectifier from the RBV800 series, rated for an average forward current of 8.0 A at a case temperature of 55°C. It features a maximum repetitive peak reverse voltage of 1000 V and a maximum RMS voltage of 700 V. The device supports a peak forward surge current of 300 A under single half-sine wave conditions. Electrical characteristics include a maximum forward voltage of 1.0 V per diode at 4.0 A and a typical thermal resistance of 2.5 °C/W. Operating junction temperatures range from -40 to +150 °C.
Bridge Rectifier Feature Summary
- High current capability with robust surge handling
- Low forward voltage drop for improved efficiency
- Rated isolation voltage of 2000 V for safety
- Flame retardant epoxy construction
Bridge Rectifier Applications
- Printed circuit board mounting
- General purpose rectification in power supplies
- AC to DC conversion circuits
Bridge Rectifier Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status as indicated in product documentation. Ensure storage conditions remain within specified temperature ranges to maintain material integrity prior to assembly.
Bridge Rectifier Selection Notes
Select this component when a 1000 V blocking voltage is required alongside an 8.0 A continuous current rating. Consider the 2.5 °C/W thermal resistance for heatsink design calculations. Verify that the operating environment stays within the -40 to +150 °C junction temperature limits for reliable performance.
Bridge Rectifier Part Context
This part belongs to the RBV800-RBV810 series of silicon bridge rectifiers manufactured by EIC Semiconductor Inc. The series offers varying voltage ratings from 50 V to 1000 V while maintaining a consistent 8.0 A current capacity. These components are designed for general-purpose applications requiring reliable AC-to-DC conversion.
Bridge Rectifier Replacement Considerations
Direct substitutes must match the 1000 V reverse voltage, 8.0 A forward current, and similar package dimensions. Verify pinout compatibility and thermal resistance values before implementation.
Bridge Rectifier FAQ
What is the maximum repetitive peak reverse voltage?
The RBV810 has a maximum repetitive peak reverse voltage (VRRM) of 1000 V.
How does capacitive load affect current rating?
For capacitive loads, the current should be derated by 20% from the rated average forward current.
What is the typical thermal resistance?
The typical thermal resistance from junction to case is 2.5 °C/W when mounted on a specified aluminum plate heatsink.
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