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RD3N01BATTL1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is PCH -80V -10A TO-252, POWER MOSF. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RD3N01BATTL1
- Description：PCH -80V -10A TO-252, POWER MOSF
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：141mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：840 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：25W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for RD3N01BATTL1
Single FETs, MOSFETs Overview
The RD3N01BATTL1 is a single-channel P-Channel Power MOSFET manufactured by ROHM Semiconductor, housed in a TO-252-3 surface-mount package. It features an 80 V drain-source breakdown voltage and supports a continuous drain current of 10 A. The device exhibits a maximum on-resistance of 163 mOhms at a gate-source voltage of -4.5 V. Electrical characteristics include a gate threshold voltage of 4 V, a total gate charge of 21 nC, and a power dissipation rating of 25 W. Operating temperatures range from -55 C to +150 C.
Single FETs, MOSFETs Feature Summary
- P-Channel enhancement mode configuration for efficient switching control
- Low on-resistance design optimized for minimizing conduction losses
- Robust thermal performance within a compact TO-252 (DPAK) footprint
Single FETs, MOSFETs Applications
- General purpose power switching circuits
- DC-DC converter output stages
- Motor driver low-side or high-side switches
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the TL1 suffix to ensure correct reel packaging specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the datasheet for specific thermal resistance values required for your heat sink design. Ensure gate drive voltages remain within the specified -20 V to +20 V limits to prevent device damage.
Single FETs, MOSFETs Selection Notes
Select this component when a P-Channel solution is preferred over N-Channel alternatives in high-side switching applications. The 80 V rating suits systems operating below this threshold with adequate safety margins. Consider the 163 mOhm on-resistance for efficiency requirements at 10 A loads. Evaluate the TO-252 package suitability against available PCB real estate and thermal management capabilities.
Single FETs, MOSFETs Part Context
This device belongs to ROHM's RD3N series of power MOSFETs designed for general-purpose switching. The series emphasizes low on-resistance and fast switching speeds within standard surface-mount packages. The RD3N01BATTL1 variant specifically targets applications requiring moderate voltage blocking and current handling capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent P-Channel MOSFETs with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing the original component.
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