RDX100N60FU6

Description：MOSFET N-CH 600V 10A TO220FM
Series：-
Mfr：Rohm Semiconductor
Package：Bulk

SKU:e85583c29f47 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

RDX100N60FU6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 600V 10A TO220FM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RDX100N60FU6

Description：MOSFET N-CH 600V 10A TO220FM
Series：-
Mfr：Rohm Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：650mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：45W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FM
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for RDX100N60FU6

RDX100N60FU6

Single FETs, MOSFETs Overview

The RDX100N60 is a silicon N-channel MOS FET in a TO-220FM package, designed for 10V drive applications. It features a drain-source voltage of 600V and a continuous drain current of 10A. The typical on-resistance is 0.48Ω at VGS=10V and ID=5.0A. Key electrical parameters include a gate threshold voltage of 2.0 to 4.0V, input capacitance of 1600pF, and total gate charge of 10nC. Thermal resistance from channel to case is 2.78°C/W, with a maximum power dissipation of 45W at 25°C case temperature.

Single FETs, MOSFETs Feature Summary

Low on-resistance for efficient conduction
Low input capacitance for reduced drive requirements
Excellent resistance to damage from static electricity

Single FETs, MOSFETs Applications

Switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required packaging format. Confirm that the component meets the intended environmental operating conditions. Ensure compatibility with the 10V gate drive logic level specified in the datasheet. Check for any specific handling precautions related to electrostatic discharge sensitivity during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability with moderate current handling. The 10V drive characteristic simplifies gate driver design compared to standard 20V devices. Consider the thermal resistance and power dissipation limits when designing heat sinking solutions for continuous operation.

Single FETs, MOSFETs Part Context

This device belongs to Rohm Semiconductor's lineup of N-channel MOS FETs optimized for general-purpose switching. The TO-220FM package provides robust mechanical stability and thermal performance suitable for through-hole mounting. It integrates body diode and gate protection features for enhanced reliability in standard electronic equipment.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified equivalents. Ensure replacement parts match the 600V rating, TO-220FM package, and 10V drive specifications. Verify that thermal and electrical characteristics meet or exceed the original requirements.