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Product Detailed Parameters
- Description：MOSFET
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RF1S15N06 is a single-element, N-channel silicon power MOSFET manufactured by Harris Corporation. It operates in enhancement mode with a maximum drain current of 15A and a minimum drain-source breakdown voltage of 60V. The device features a maximum on-resistance of 0.14 ohms and includes a built-in diode. It utilizes a TO-204AA flange mount package with the case connected to the drain terminal. The component is designed for high-power applications requiring robust thermal management via its metal flange housing.
Feature Summary
- Flange mount construction with direct drain connection for efficient heat dissipation
- Integrated body diode for synchronous rectification or freewheeling operations
- Logic-level compatible gate drive characteristics within the RF1S series
Applications
- High-current DC-DC power conversion circuits
- Motor control switching stages
- Industrial power supply inverters
Procurement Notes
Verify the specific manufacturer source, as Harris Semiconductor assets were acquired by Renesas Electronics. Confirm that the part number corresponds to original Harris production data rather than subsequent Renesas rebrands. Ensure the documentation matches the TO-204AA package style and 60V rating. Check for RoHS compliance status if required by your manufacturing standards, as older Harris parts may not meet current environmental directives.
Selection Notes
Select this component when a 60V N-channel MOSFET with a 15A continuous current rating is required in a flange-mount configuration. The 0.14 ohm on-resistance makes it suitable for moderate efficiency applications where low conduction losses are necessary but extreme miniaturization is not the primary constraint. Consider the thermal resistance of the TO-204AA package for your heatsinking design.
Part Context
This device belongs to the Harris RF1S series of power MOSFETs, which are characterized by their rugged flange-mount packages designed for industrial and automotive environments. The series offers various voltage and current ratings, with the RF1S15N06 representing the 60V, 15A segment. These components are typically used in applications demanding high reliability and effective thermal transfer through the mounting surface.
Replacement Considerations
Check for equivalent parts from Renesas Electronics, which acquired Harris Semiconductor's power products. Verify pinout compatibility and thermal characteristics against other TO-204AA (TO-3) packaged N-channel MOSFETs with similar 60V/15A specifications.
