ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RF1S17N06L is a power field-effect transistor manufactured by Harris Corporation. It is an N-channel silicon metal-oxide semiconductor FET housed in a TO-263AB package. The device supports a drain current of 17A and withstands a drain-source voltage of 60V. Its on-resistance is specified at 0.1 ohms. This component is classified as a logic level gate compatible with 5V operation and is RoHS compliant.
Feature Summary
- N-channel silicon MOSFET construction
- Logic level gate compatibility for 5V systems
- TO-263AB surface-mount packaging
Applications
- High-frequency RF switching applications
- Radio frequency circuit implementations
- Motor control cabinet installations
Procurement Notes
Verify the manufacturer origin carefully, as this part number appears in records associated with both Harris Corporation and Renesas. Confirm that the specific unit received matches the intended electrical specifications and package type. Ensure compliance with RoHS standards if required by the design. Cross-reference the ordering suffix to confirm exact functional parameters before integration into production systems.
Selection Notes
Select this component when a 60V N-channel MOSFET with 17A continuous current capability is required. The 0.1 ohm on-resistance makes it suitable for low-loss switching applications. Consider the TO-263AB package for thermal management needs. Verify logic level drive requirements align with the 5V gate threshold specification for proper system interface.
Part Context
This device belongs to the RF1S series of power MOSFET arrays produced by Harris Corporation. The series includes variants such as the RF1S15N06 and RF1S30N06LE, offering different current ratings within the same 60V family. These components are designed for robust performance in power electronics and radio frequency environments requiring reliable switching characteristics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. The RF1S17N06LSM is listed in some databases but lacks explicit confirmation as a direct functional equivalent in official sources. Consult manufacturer cross-reference guides for verified alternatives.
