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Product Detailed Parameters
- Description：MOSFET N-CH 60V 25A
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RF1S25N06SMR4643 is a radiation-hardened N-channel Power MOSFET manufactured by Harris Corporation. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 25A at 25°C. The device exhibits a maximum on-resistance of 0.085Ω at 25°C. Designed for high-reliability environments, it withstands total ionizing doses up to 100 krad(Si). The component utilizes a TO-263AB (D²PAK) surface-mount package.
Feature Summary
- Radiation-tolerant construction designed for space and military applications
- High-voltage switching capability with low on-state resistance
- Integrated body diode for inductive load commutation
- Enhancement-mode operation for direct logic control
Applications
- Spacecraft power distribution systems
- Military-grade DC-DC converters
- Radiation-hardened motor drivers
- Satellite payload power switches
Procurement Notes
Verify the specific suffix R4643 against official Harris datasheets to confirm tape-and-reel packaging specifications. Ensure procurement channels provide traceability documentation required for radiation-hardened components. Confirm RoHS status as legacy Harris products may not comply with modern environmental directives.
Selection Notes
Select this component when designing circuits requiring immunity to total ionizing dose effects up to 100 krad(Si). The 60V rating suits low-voltage bus architectures. Verify thermal management requirements for the TO-263AB package under continuous 25A load conditions. Consider gate charge characteristics for switching frequency optimization.
Part Context
This part belongs to the RF1S series of radiation-hardened silicon MOSFETs from Harris Corporation. The series covers various voltage and current ratings optimized for harsh environments. The TO-263AB form factor allows for efficient heat dissipation in compact board layouts compared to traditional through-hole alternatives.
Replacement Considerations
Direct replacements include other Harris RF1S series variants with matching voltage and current ratings. Cross-reference with Infineon or Vishay radiation-hardened MOSFETs if Harris supply is discontinued. Verify pinout compatibility before substitution.
