RF1S40N10LE

$1.21

Description：MOSFET N-CH 100V 40A
Series：*

SKU:52a4be862e14 Category: FET, MOSFET Arrays Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 40A
Series：*
Mfr：Harris Corporation
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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RF1S40N10LE

Overview

The RF1S40N10LE is a single N-channel enhancement mode silicon power MOSFET manufactured by Harris Corporation. It utilizes the TO-263AB (D2PAK) surface-mount package with the case connected to the drain. The device supports a drain-source breakdown voltage of 100 V and a continuous drain current of 40 A at case temperature. Its maximum on-resistance is specified at 40 mΩ. The component operates within an ambient temperature range of -55°C to +175°C junction temperature, with a total power dissipation rating of 150 W.

Feature Summary

Single N-channel enhancement mode configuration
Logic level compatible gate drive
Drain-connected thermal pad for efficient heat dissipation

Applications

DC-DC converter circuits
Motor control applications
Power switching modules

Procurement Notes

Verify the manufacturer designation carefully, as the RF1S series was originally developed by Harris Semiconductor before its acquisition by Intersil and subsequent integration into Renesas Electronics. Confirm that the specific suffix 'LE' aligns with the intended lead-free or environmental compliance requirements for your assembly process. Ensure the datasheet version matches the production era, as documentation may vary between Harris, Intersil, and Renesas releases.

Selection Notes

Select this component when a robust single N-channel switch is required in a D2PAK footprint. The 100V rating provides adequate headroom for standard low-voltage bus systems. The 40A current capability suits moderate-power industrial loads. Verify that the PCB layout accommodates the exposed drain pad for proper thermal management, as performance relies heavily on copper area connectivity.

Part Context

This part belongs to the RF1S series of logic-level power MOSFETs designed for high-efficiency switching. The series typically includes variants with different voltage and current ratings, all sharing the same TO-263AB mechanical outline. The 'L' in the part number generally indicates logic-level gate threshold characteristics, allowing direct drive from standard digital logic outputs without additional gate driver stages.