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RF505B6STL is listed in the Single Diodes range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is DIODE STANDARD 600V 5A CPD. Review the specifications below when checking this part for your BOM.
The RF505B6STL is a single silicon epitaxial planar super fast recovery diode manufactured by ROHM Semiconductor. It features a TO-252-3 (DPAK) surface-mount package with a maximum repetitive peak reverse voltage of 600 V and an average rectified forward current rating of 5 A at a case temperature of 42°C. The device exhibits a low reverse current of 10 μA maximum at 600 V and a typical forward voltage of 1.3 V at 5 A. Its switching performance includes a maximum reverse recovery time of 30 ns under specified test conditions, supporting high-speed general rectification applications.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications or cut tape availability. Confirm RoHS compliance status and REACH SVHC declarations directly from the latest datasheet revision before procurement. Ensure the component meets the required automotive or industrial qualification standards if applicable to the design.
Select this component for designs requiring a robust single-diode solution in a compact surface-mount footprint. Evaluate the thermal resistance characteristics relative to the expected ambient operating conditions and derating curves. Consider the peak surge current capability when designing protection against transient load events or inrush currents within the target application environment.
This part belongs to the RF505 series of super fast recovery diodes produced by ROHM Semiconductor. The series is engineered for efficiency in power conversion systems where reduced switching losses are critical. The TO-252 package variant offers a balance between current handling capacity and board space optimization compared to through-hole alternatives.
RF505BM6S
The maximum junction temperature is 150°C.
The reverse recovery time is measured at an forward current of 0.5 A, a reverse current of 1 A, and an irradiation level of 0.25 times the reverse current.
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