RF5L08350CB4

Overview

The RF5L08350CB4 is a 400 W, 50 V high-performance internally matched LDMOS FET designed for applications across the 0.4 to 1 GHz frequency band. It operates at a drain-source breakdown voltage of 110 V and supports a maximum junction temperature of 200 °C with a thermal resistance of 0.35 °C/W. At 860 MHz, it delivers 400 W output power with 19 dB gain and 61% drain efficiency under pulsed CW conditions. The device features integrated ESD protection rated Class 2 (HBM) and Class C3 (CDM), housed in a B4E package.

Feature Summary

• Internally matched design simplifies circuit integration
• Integrated electrostatic discharge protection
• Wide gate-source voltage range supporting improved Class C operation
• High thermal stability with low hot carrier injection drift

Applications

• Wideband laboratory amplifiers from 0.4 to 1 GHz
• Digital UHF television transmitters operating between 470-860 MHz
• Particle accelerator systems at 650 MHz
• RF energy generation equipment at 915 MHz

Procurement Notes

Verify component authenticity by checking the marking code '5L08350' against the datasheet specifications. Confirm the package type is B4E and ensure the ordering suffix matches the required packing configuration. Cross-reference the ECOPACK environmental compliance grade with project requirements before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high linearity and efficiency within the 0.4 to 1 GHz spectrum. Ensure the application environment maintains the case temperature near 25 °C for absolute maximum ratings or utilizes adequate heatsinking to manage the 0.35 °C/W thermal resistance. Verify that the load mismatch does not exceed the specified VSWR limits during operation.

Part Context

This part belongs to STMicroelectronics' RFXL series of RF power LDMOS transistors. It serves as a specialized solution for broadband RF amplification tasks where internal matching reduces external component count. The device complements other models in the family by offering specific power and frequency characteristics tailored for broadcast and industrial RF applications.

Replacement Considerations

Consult official STMicroelectronics documentation for confirmed substitute part numbers. Do not assume functional equivalence with other LDMOS devices without verifying pinout compatibility, electrical parameters, and thermal performance data.