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Product Detailed Parameters
- Description：DIODE ARRAY GEN PURP 200V 3A CPD
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：3A
- Voltage - Forward (Vf) (Max) @ If：930 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：25 ns
- Current - Reverse Leakage @ Vr：10 µA @ 200 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：CPD
- Grade：-
- Qualification：-
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Overview
The RF601B2DTL is a fast recovery diode manufactured by ROHM Semiconductor, designed for general rectification applications. It features a CPD (Power Mold Type) package with a reverse voltage of 200V and an average rectified forward current of 6A. The device exhibits ultra-low forward voltage characteristics, with a maximum VF of 0.93V at 3A, and very fast recovery performance, characterized by a maximum reverse recovery time (trr) of 25ns under specified test conditions. It supports a peak surge forward current of 40A and operates within a junction temperature range up to 150°C.
Feature Summary
- Ultra-low forward voltage design minimizes conduction losses
- Very fast recovery speed reduces switching losses
- CPD power mold type construction ensures robust thermal handling
Applications
- General rectification circuits
- High-frequency switching power supplies
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix 'TL' against official ROHM documentation to confirm tape-and-reel packaging specifications. Ensure the component status aligns with current production recommendations, as legacy part numbers may have alternative successors. Cross-reference the datasheet revision date to validate electrical parameter limits before finalizing procurement orders.
Selection Notes
Select this component for applications requiring low conduction loss and rapid switching speeds in compact power modules. Evaluate the thermal impedance and derating curves to ensure adequate heat dissipation within the TO-252AA package constraints. Confirm that the 200V reverse voltage rating provides sufficient margin for the target circuit's peak repetitive reverse voltage requirements.
Part Context
This component belongs to ROHM's fast recovery diode series, utilizing silicon epitaxial planar technology. It is housed in a surface-mount TO-252AA (D-Pak) package, suitable for automated assembly processes. The device is engineered to replace older through-hole or standard plastic packages while maintaining high reliability and improved thermal performance for modern electronic equipment.
Replacement Considerations
RF601BGE2DTL
FAQ
What is the maximum reverse recovery time for the RF601B2DTL?
The maximum reverse recovery time (trr) is 25ns when tested at IF=0.5A, IR=1A, and Irr=0.25*IR.
Does the RF601B2DTL support high surge currents?
Yes, it can withstand a peak surge forward current (IFSM) of 40A for a single half-cycle at 60Hz.
