SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RFN30TS6DGC11 is a fast recovery rectifier manufactured by ROHM Semiconductor, housed in a TO-247-3 through-hole package. It features a dual common cathode configuration with a maximum repetitive reverse voltage (Vrm) of 600 V and an average forward current (Io) rating of 30 A. The device exhibits a low forward voltage drop of 2 V at rated conditions and a typical reverse recovery time of 15 ns. It supports a maximum surge current of 80 A and operates within a junction temperature range from -55°C to +175°C.
Verify the specific ordering suffix 'GC11' against official ROHM documentation to confirm package type and tape/reel specifications. Confirm that the component status is active for new designs, as similar variants may carry non-recommended status. Cross-reference the datasheet revision date to ensure compliance with current environmental regulations and RoHS standards before finalizing procurement orders.
Select this component when high-speed switching and high current capacity are required in a single package. The dual common cathode arrangement simplifies circuit design for full-bridge configurations compared to using discrete single diodes. Ensure the application's peak inverse voltage does not exceed 600 V and that thermal management solutions can handle the power dissipation associated with 30 A continuous operation.
This part belongs to ROHM's series of high-power fast recovery rectifiers designed for industrial and automotive applications. The TO-247-3 package provides robust mechanical stability and efficient heat dissipation, making it suitable for high-current environments. It complements other discrete semiconductors in power conversion stages where rapid recovery and low conduction losses are critical for system efficiency.
Check for direct substitutes with identical pinout and electrical ratings if supply chain issues arise. Verify that any replacement maintains the 600 V reverse voltage and 30 A current capabilities. Ensure the alternative device also offers comparable reverse recovery times to prevent switching losses or voltage spikes in high-frequency applications.