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Product Detailed Parameters
- Description：DIODE ARRAY GP 200V 3A TO-252GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：3A
- Voltage - Forward (Vf) (Max) @ If：980 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：25 ns
- Current - Reverse Leakage @ Vr：10 µA @ 200 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252GE
- Grade：-
- Qualification：-
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Overview
The RFN6BGE2DTL is a super fast recovery diode manufactured by ROHM Semiconductor, designed for general rectification applications. It features a TO-252AA (D-Pak) surface-mount package with three terminals. Key electrical specifications include a maximum repetitive reverse voltage of 200 V and an average rectified forward current of 6 A. The device exhibits a maximum forward voltage of 0.98 V at 3 A and a maximum reverse current of 0.01 mA at 200 V. Its maximum reverse recovery time is 25 ns when tested at 500 mA.
Feature Summary
- Super fast recovery characteristics optimized for high-speed switching applications
- Low forward voltage drop to minimize conduction losses
- Surface-mount construction in a compact D-Pak package for automated assembly
Applications
- General purpose rectification circuits
- High-frequency power supply designs
- DC-DC converter output stages
Procurement Notes
Verify the complete part number including the TL suffix against official ROHM documentation to ensure correct tape-and-reel packaging configuration. Confirm that the application does not require automotive qualification, as this standard-grade component is explicitly not recommended for车载 equipment. Cross-reference the JEITA SC-63 package code to match footprint requirements in the target design.
Selection Notes
Select this component for designs requiring a balance of 6 A current handling and 200 V blocking capability in a small form factor. The 25 ns recovery time suits moderate to high-frequency switching topologies. Ensure thermal management accounts for the TO-252AA package's thermal resistance. Compare against the RFN6RSM2S if a smaller TO-277A package is preferred, noting potential differences in recovery speed and package dimensions.
Part Context
This device belongs to the RFN series of super fast recovery diodes from ROHM Semiconductor. It serves as a direct pin-compatible replacement for the older RFN6BM2D model, which is no longer recommended for new designs. The series provides a standardized solution for replacing slower standard recovery diodes in existing circuits to improve efficiency and reduce switching noise.
Replacement Considerations
The RFN6BM2D is a confirmed substitute with identical pinout and package, though it is marked as not recommended for new designs. Both parts share the same 200 V, 6 A ratings and TO-252AA footprint. Verify that the legacy status of the RFN6BM2D does not impact long-term supply availability for production runs.
