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The RGS30NL65DHRBTL is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for automotive applications. It features an integrated Fast Recovery Diode (FRD) and utilizes LPDL packaging in a TO-263-3 surface-mount configuration. Key electrical parameters include a collector-emitter voltage of 650V and a continuous collector current of 40A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.9V and supports a maximum power dissipation of 227W. Operating temperatures range from -40°C to +175°C, ensuring reliability in high-temperature environments.
Verify the specific suffix HRBTL against official datasheets to confirm package type and tape/reel specifications. Ensure component authenticity through authorized distributors. Confirm RoHS compliance status and automotive grade certifications prior to integration into production designs.
Select this component for designs requiring high voltage isolation and fast switching speeds in compact surface-mount layouts. Evaluate thermal management requirements given the 227W power dissipation capability. Compare saturation voltage and switching times against alternative IGBTs to optimize efficiency in power conversion circuits.
This part belongs to ROHM's automotive-grade IGBT portfolio, specifically engineered for high-reliability power electronics. It complements other models like the RGW80NL65DHRBTL, offering similar trench technology but tailored for different current ratings within the same 650V family.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before considering any cross-brand alternatives.