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The RGS40NL65DHRBTL is a field-stop trench IGBT manufactured by ROHM Semiconductor, designed for automotive applications. It features an integrated fast recovery diode (FRD) and utilizes LPDL packaging in a TO-263-3 surface-mount configuration. Key electrical parameters include a collector-emitter voltage of 650V and a continuous collector current of 83A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.9V and supports a maximum power dissipation of 227W. It operates within a temperature range of -40°C to +175°C and offers a short-circuit withstand time of 5µs.
Verify the specific suffix HRBTL against official datasheets to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS directives and check for any obsolescence notices or last-time buy notifications from the manufacturer before finalizing procurement plans.
Select this component for high-efficiency automotive power conversion where low saturation voltage and robust short-circuit capability are required. Compare thermal resistance values against system heat sink capabilities and ensure gate drive voltages remain within the specified limits for optimal switching performance.
This part belongs to ROHM's RG series of automotive IGBTs, which are optimized for high-power density applications. The series typically combines trench gate technology with field-stop structures to minimize losses while maintaining high reliability under harsh automotive operating conditions.
Direct substitutes may include other ROHM parts with similar voltage and current ratings, such as the RGW80NL65DHRBTL for higher current capacity. Verify pinout compatibility and thermal characteristics when considering cross-model replacements.