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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 50A TO-263L
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
- Power - Max：206 W
- Switching Energy：810µJ (on), 650µJ (off)
- Input Type：Standard
- Gate Charge：31 nC
- Td (on/off) @ 25°C：28ns/91ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263L
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RGS50NL65HRBTL is a single N-channel IGBT manufactured by ROHM Semiconductor, utilizing silicon technology in a TO-263-3 (LPDL) surface-mount package. It features a field-stop trench structure with an integrated fast recovery diode (FRD). Key electrical parameters include a collector-emitter voltage of 650 V and a continuous collector current of 48 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.1 V and supports a power dissipation of 194 W. It operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Integrated Fast Recovery Diode (FRD) for simplified circuit design
- Field Stop Trench Structure for low switching losses
- Automotive Grade Qualification compliant with AEC-Q101 standards
Applications
- On-board and off-board electric vehicle chargers
- DC-DC converters
- Power Factor Correction (PFC) circuits
- Industrial inverters
Procurement Notes
Verify the specific suffix 'TL' against the official datasheet to confirm tape-and-reel packaging requirements. Ensure the component meets AEC-Q101 automotive reliability standards if used in qualified systems. Cross-reference the manufacturer's latest lifecycle status to confirm availability for new designs.
Selection Notes
Select this component for applications requiring high voltage blocking and integrated freewheeling capabilities. The TO-263-3 package facilitates surface-mount assembly. Evaluate thermal management needs based on the 194 W power dissipation rating and the 2.1 V saturation voltage under expected load conditions.
Part Context
This part belongs to ROHM's RGxNL65HRB series of automotive-grade IGBTs. These devices are engineered for high efficiency in power conversion systems. The series utilizes advanced trench gate technology to minimize conduction and switching losses compared to planar structures.
Replacement Considerations
Direct replacements may include other ROHM parts from the same LPDL family, such as the RGT50NL65DGTL or RGS50NL65DGTL, provided pin compatibility and electrical ratings align with the system requirements.
