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The RGS50TSX2HRC11 is a field stop trench IGBT from ROHM Semiconductor, rated at 1200V collector-emitter voltage and 25A continuous collector current at 100°C. It features a minimum short-circuit withstand time of 10µs and a typical turn-off time of 205ns. The device has a typical collector-emitter saturation voltage of 1.7V and a maximum power dissipation of 395W. Packaged in TO-247N, it operates within a storage temperature range of -55°C to 175°C.
Verify the specific suffix against official documentation to confirm package type and compliance status. Ensure the component meets project requirements for thermal management and electrical ratings before integration. Confirm availability through authorized channels as supply levels may vary.
Select this model for applications requiring robust short-circuit tolerance and efficient power conversion. The TO-247N package facilitates effective heat dissipation. Verify that the 10µs short-circuit duration aligns with system protection strategies.
This component belongs to the RGS series, designed for general-purpose inverters and power supplies. It utilizes field stop trench technology to achieve low saturation voltage, contributing to smaller and more efficient application designs compared to older planar technologies.
Direct substitutes are not explicitly listed in the provided data. When replacing, ensure the new component matches the 1200V rating, 25A current capacity, TO-247N package, and 10µs short-circuit withstand time.