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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 85A TO-247G
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：85 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Power - Max：277 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：94 nC
- Td (on/off) @ 25°C：42ns/137ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：54 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247G
- Grade：-
- Qualification：-
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Overview
The RGT00TS65DGC13 is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes silicon technology and features a Field Stop Trench structure with an integrated Fast Recovery Diode (FRD). The device is housed in a TO-247GE-3 package designed for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 650 V, a continuous collector current of 80 A at 100°C, and a typical collector-emitter saturation voltage of 1.65 V. It supports a short-circuit withstand time of 5 µs and operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- Integrated very fast and soft recovery FRD for efficient switching performance
- Short circuit withstand capability of 5 µs for enhanced system robustness
- Low collector-emitter saturation voltage to minimize conduction losses
- Trench Field Stop technology for reduced switching loss
Applications
- Inverter circuits requiring high reliability
- High-frequency power conversion systems
- Industrial motor drives
Procurement Notes
Verify the specific suffix GC13 against official datasheets to confirm packaging details and compliance status. Confirm availability as this series may be designated for existing customers rather than new designs. Ensure thermal management aligns with the specified power dissipation limits.
Selection Notes
Select this component when a 650V IGBT with integrated anti-parallel diode is required for inverter applications. The 5 µs short-circuit rating provides protection margins. Compare saturation voltage and switching times against alternative trench field stop devices to optimize efficiency for the target frequency.
Part Context
This part belongs to the RGT series of ROHM's trench field stop IGBTs. These devices are engineered for inverter applications, balancing low conduction and switching losses. The series typically includes variants with different current ratings and short-circuit capabilities within the same 650V voltage class.
Replacement Considerations
Check for direct substitutes within the RGT series or other ROHM trench field stop families. Verify pin compatibility and thermal characteristics before substituting with generic 650V IGBTs.
