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The RGT16BM65DTL is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-252 package. It features a maximum collector-emitter voltage of 650V and a continuous collector current of 8A at 100°C. The device includes a built-in Fast Recovery Diode (FRD) and supports a short-circuit withstand time of 5µs. Typical collector-emitter saturation voltage is 1.65V, with a typical reverse recovery time of 95ns. Power dissipation reaches 94W, operating within a temperature range of -55°C to 175°C.
Verify the specific suffix 'TL' against the official datasheet to confirm tape-and-reel packaging requirements. Ensure the component matches the exact electrical ratings for your design. Check RoHS compliance status as per the latest manufacturer documentation before finalizing procurement plans.
Select this component when a compact TO-252 footprint is required alongside 650V blocking capability. The integrated FRD simplifies circuit design by eliminating external diodes. Consider the 8A current rating and thermal management needs for the intended application environment.
This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM Semiconductor. It shares architectural similarities with other models like the RGT16NL65D but differs in packaging and specific parameter optimizations. The series targets efficient power switching solutions.
The RGT16NL65DGTL is a documented alternative with similar electrical specifications but utilizes an LPDL (TO-263L) package instead of TO-252. Verify pin compatibility and thermal performance differences before substitution.