RGT16BM65DTL

RGT16BM65DTL

$2.48
  • Description:IGBT TRENCH FS 650V 16A TO-252
  • Series:-

SKU:b2306c55f5b5 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 16A TO-252
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):16 A
  • Current - Collector Pulsed (Icm):24 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 8A
  • Power - Max:94 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:21 nC
  • Td (on/off) @ 25°C:13ns/33ns
  • Test Condition:400V, 8A, 10Ohm, 15V
  • Reverse Recovery Time (trr):42 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252
  • Grade:-
  • Qualification:-

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RGT16BM65DTL

Overview

The RGT16BM65DTL is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-252 package. It features a maximum collector-emitter voltage of 650V and a continuous collector current of 8A at 100°C. The device includes a built-in Fast Recovery Diode (FRD) and supports a short-circuit withstand time of 5µs. Typical collector-emitter saturation voltage is 1.65V, with a typical reverse recovery time of 95ns. Power dissipation reaches 94W, operating within a temperature range of -55°C to 175°C.

Feature Summary

  • Field Stop Trench technology for low switching and conduction losses
  • Integrated FRD with very fast and soft recovery characteristics
  • Short-circuit tolerance capability of 5 microseconds

Applications

  • Inverter circuits requiring high reliability
  • General power conversion systems
  • High-frequency switching applications

Procurement Notes

Verify the specific suffix 'TL' against the official datasheet to confirm tape-and-reel packaging requirements. Ensure the component matches the exact electrical ratings for your design. Check RoHS compliance status as per the latest manufacturer documentation before finalizing procurement plans.

Selection Notes

Select this component when a compact TO-252 footprint is required alongside 650V blocking capability. The integrated FRD simplifies circuit design by eliminating external diodes. Consider the 8A current rating and thermal management needs for the intended application environment.

Part Context

This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM Semiconductor. It shares architectural similarities with other models like the RGT16NL65D but differs in packaging and specific parameter optimizations. The series targets efficient power switching solutions.

Replacement Considerations

The RGT16NL65DGTL is a documented alternative with similar electrical specifications but utilizes an LPDL (TO-263L) package instead of TO-252. Verify pin compatibility and thermal performance differences before substitution.

RGT16BM65DTLRGT16BM65DTL
$2.48
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