ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 16A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：24 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 8A
- Power - Max：94 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：21 nC
- Td (on/off) @ 25°C：13ns/33ns
- Test Condition：400V, 8A, 10Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：-
- Qualification：-
Download product information
Overview
The RGT16NL65DGTL is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a built-in Fast Recovery Diode (FRD) and supports a collector-emitter voltage of 650 V with a continuous collector current of 8 A at 25°C. The device offers a typical saturation voltage of 2.1 V and a power dissipation rating of 94 W. It provides a minimum short-circuit withstand time of 5 µs, making it suitable for inverter applications. The component operates within a temperature range of -40°C to +175°C and is housed in an LPDL (TO-263-3) surface-mount package.
Feature Summary
- Field Stop Trench structure for low switching loss
- Integrated very fast and soft recovery FRD
- Short circuit withstand capability of 5µs
Applications
- Inverter circuits
- Motor drives
- Power supplies
Procurement Notes
Verify the specific ordering suffix 'GTL' against the manufacturer's latest datasheet to confirm packaging details and RoHS compliance status. Ensure that the procurement channel sources genuine components from authorized distributors or direct manufacturer channels to avoid counterfeit parts. Confirm lead times and minimum order quantities directly with the supplier prior to placing orders.
Selection Notes
Select this component for designs requiring a 650V rated IGBT with integrated anti-parallel diode functionality. The 5µs short-circuit tolerance allows for simplified protection circuitry in inverter topologies. Consider the TO-263-3 package for surface-mount assembly requirements and verify thermal management capabilities based on the 94W power dissipation rating under expected operating conditions.
Part Context
This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM Semiconductor. The series is characterized by high reliability and performance optimized for inverter applications. The 'NL' designation typically indicates the inclusion of a built-in FRD, while the 'T' suffix often denotes specific short-circuit timing characteristics.
Replacement Considerations
Direct replacements should be sought from the same RGT series family, such as the RGT8NL65DGTL or RGT20NL65DGTL, depending on current requirements. Verify pin compatibility and thermal resistance parameters when substituting with other manufacturers' 650V trench IGBTs featuring integrated diodes.
