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The RGT16NS65DGC9 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-262-3 (TO-262) through-hole package with an integrated Fast Recovery Diode (FRD). Key electrical parameters include a collector-emitter breakdown voltage of 650 V and a continuous collector current of 16 A at 25°C. The typical collector-emitter saturation voltage is 2.1 V, with a maximum gate-emitter voltage of 30 V. Power dissipation is rated at 94 W, and the device operates within a temperature range of -40°C to +175°C. The short-circuit withstand time is specified as 5 µs.
Verify the specific suffix GC9 against the official datasheet to confirm the TO-262 tube packaging configuration. Confirm RoHS compliance status via the manufacturer's latest documentation before integration. Ensure thermal management design accounts for the 94 W power dissipation rating in the target application environment.
Select this component for applications requiring high voltage tolerance and robust short-circuit protection. The 16 A current rating suits moderate power levels. Verify that the 2.1 V saturation voltage meets efficiency requirements compared to lower-voltage-drop alternatives. Ensure the TO-262 package fits the PCB layout constraints.
This part belongs to the RGT16NS65D series from ROHM Semiconductor. It is designed for inverter applications with a focus on reliability. The series utilizes trench gate technology to optimize performance between conduction losses and switching speeds.
Check for direct pin-compatible substitutes within the same series or newer generations recommended by ROHM. Verify if alternative packages like LPDL offer equivalent electrical characteristics if space is a constraint.