RGT16NS65DGC9

RGT16NS65DGC9

$1.56
  • Description:IGBT TRENCH FS 650V 16A TO-262
  • Series:-

SKU:7da2e6fa1eb6 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 16A TO-262
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):16 A
  • Current - Collector Pulsed (Icm):24 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 8A
  • Power - Max:94 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:21 nC
  • Td (on/off) @ 25°C:13ns/33ns
  • Test Condition:400V, 8A, 10Ohm, 15V
  • Reverse Recovery Time (trr):42 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package:TO-262
  • Grade:-
  • Qualification:-

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RGT16NS65DGC9

Overview

The RGT16NS65DGC9 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-262-3 (TO-262) through-hole package with an integrated Fast Recovery Diode (FRD). Key electrical parameters include a collector-emitter breakdown voltage of 650 V and a continuous collector current of 16 A at 25°C. The typical collector-emitter saturation voltage is 2.1 V, with a maximum gate-emitter voltage of 30 V. Power dissipation is rated at 94 W, and the device operates within a temperature range of -40°C to +175°C. The short-circuit withstand time is specified as 5 µs.

Feature Summary

  • Field Stop Trench structure for low saturation voltage and switching loss
  • Integrated very fast and soft recovery FRD
  • 5 µs short-circuit withstand capability

Applications

  • Inverter circuits
  • Industrial motor drives
  • Switching power supplies

Procurement Notes

Verify the specific suffix GC9 against the official datasheet to confirm the TO-262 tube packaging configuration. Confirm RoHS compliance status via the manufacturer's latest documentation before integration. Ensure thermal management design accounts for the 94 W power dissipation rating in the target application environment.

Selection Notes

Select this component for applications requiring high voltage tolerance and robust short-circuit protection. The 16 A current rating suits moderate power levels. Verify that the 2.1 V saturation voltage meets efficiency requirements compared to lower-voltage-drop alternatives. Ensure the TO-262 package fits the PCB layout constraints.

Part Context

This part belongs to the RGT16NS65D series from ROHM Semiconductor. It is designed for inverter applications with a focus on reliability. The series utilizes trench gate technology to optimize performance between conduction losses and switching speeds.

Replacement Considerations

Check for direct pin-compatible substitutes within the same series or newer generations recommended by ROHM. Verify if alternative packages like LPDL offer equivalent electrical characteristics if space is a constraint.

RGT16NS65DGC9RGT16NS65DGC9
$1.56
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