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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 8A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：8:00 AM
- Current - Collector Pulsed (Icm)：12:00 AM
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 4A
- Power - Max：62 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：13.5 nC
- Td (on/off) @ 25°C：17ns/69ns
- Test Condition：400V, 4A, 50Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：-
- Qualification：-
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Overview
The RGT8BM65DTL is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, packaged in TO-252GE. It features an integrated Very Fast & Soft Recovery FRD (RFN-Series). The device supports a collector-emitter voltage of 650V and a continuous collector current of 12A at 25°C case temperature. Key electrical parameters include a typical collector-emitter saturation voltage of 1.65V at 4A and a short-circuit withstand time of 5μs. Power dissipation is rated at 62W at 25°C, with an operating junction temperature range from -40°C to +175°C.
Feature Summary
- Field Stop Trench IGBT technology for low switching loss
- Integrated Very Fast & Soft Recovery FRD
- Short circuit withstand capability of 5μs
Applications
- General Inverter
- UPS
- Power Conditioner
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders. Ensure that the component meets all environmental regulations applicable to the target market.
Selection Notes
Select this component for applications requiring high voltage tolerance and fast recovery characteristics. Consider the thermal resistance values when designing heat sinks, as power dissipation decreases significantly at higher case temperatures. Verify gate drive requirements against the specified threshold voltage and total gate charge parameters.
Part Context
This part belongs to the RGT8BM65D series of Field Stop Trench IGBTs from ROHM. It is designed to offer improved efficiency through reduced saturation voltage and switching losses compared to standard trench technologies. The integration of the RFN-series diode simplifies circuit design by eliminating the need for external freewheeling diodes in many configurations.
Replacement Considerations
RGT8NL65DGTL1
FAQ
What is the maximum short-circuit withstand time for the RGT8BM65DTL?
The device has a short-circuit withstand time of 5μs.
Does the RGT8BM65DTL include an internal freewheeling diode?
Yes, it includes a built-in Very Fast & Soft Recovery FRD from the RFN-Series.
What is the typical collector-emitter saturation voltage at 25°C?
The typical VCE(sat) is 1.65V when measured at IC = 4A and VGE = 15V.
