RGT8NS65DGC9

$1.32

Description：IGBT TRENCH FS 650V 8A TO-262
Series：-

SKU:6838f4dc1d2d Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 8A TO-262
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：8:00 AM
Current - Collector Pulsed (Icm)：12:00 AM
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 4A
Power - Max：65 W
Switching Energy：-
Input Type：Standard
Gate Charge：13.5 nC
Td (on/off) @ 25°C：17ns/69ns
Test Condition：400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr)：40 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package：TO-262
Grade：-
Qualification：-

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RGT8NS65DGC9

Overview

The RGT8NS65DGC9 is a single N-channel IGBT from ROHM Semiconductor, utilizing silicon technology in a TO-262-3 package. It features a collector-emitter breakdown voltage of 650V and a continuous collector current of 8A at 100°C. The typical collector-emitter saturation voltage is 1.65V, with a maximum gate-emitter voltage of ±30V. Power dissipation reaches 65W, operating within a temperature range of -55°C to 175°C. It includes a built-in fast recovery diode (FRD) with a minimum short-circuit withstand time of 5µs.

Feature Summary

Field stop trench structure for low saturation voltage and switching loss
Integrated very fast and soft recovery FRD
Short circuit withstand capability of 5µs

Applications

Inverter circuits
Motor drives
Power supplies

Procurement Notes

Verify the component status as Not Recommended for New Designs (NRND). Confirm that the specific suffix GC9 corresponds to the tube packaging format containing 1000 units per tube. Ensure compatibility with existing designs rather than initiating new development projects due to end-of-life considerations.

Selection Notes

Select this component for applications requiring 650V blocking capability with integrated anti-parallel diodes. The TO-262-3 through-hole package suits high-power density designs needing robust thermal management. Consider the 5µs short-circuit tolerance for protection circuitry design requirements.

Part Context

This part belongs to the RGT series of field stop trench IGBTs designed for inverter applications. It shares architectural similarities with other models like the RGT16NS65D but offers lower current ratings suitable for mid-power systems. The device integrates a RFN-series FRD for improved reverse recovery performance.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official ROHM resources for potential obsolescence management strategies or alternative series recommendations.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.