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The RGTH00TS65DGC11 is a single IGBT from ROHM Semiconductor, utilizing Field Stop Trench technology. It features a 650 V collector-emitter breakdown voltage and an 85 A continuous collector current at 25°C. The device has a typical saturation voltage of 2.1 V and dissipates up to 277 W. It operates within a junction temperature range of -40°C to +175°C. Packaged in a TO-247GE-3 through-hole housing with three pins, it integrates a fast recovery diode for efficient switching performance.
Verify the specific suffix 'GC11' against the manufacturer's latest datasheet to confirm pinout compatibility and packaging details. Ensure the procurement channel provides original documentation to validate RoHS compliance and lead times. Cross-reference the part number with authorized distributors to avoid counterfeit components.
Select this component when high current handling near 85 A is required alongside low saturation voltage. The TO-247GE-3 package facilitates effective heat dissipation for high-power applications. Consider the integrated FRD to simplify circuit design compared to discrete diode solutions.
This part belongs to ROHM's RGTH series of Field Stop Trench IGBTs. These devices are engineered to balance low on-state losses with fast switching speeds. The series targets demanding power conversion applications requiring robust performance under high thermal stress.
The RGT00TS65DGC11 is a verified substitute offering identical electrical specifications and pin configuration. Verify that the replacement maintains the same TO-247GE-3 package dimensions for direct board compatibility.