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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 85A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：85 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Power - Max：277 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：94 nC
- Td (on/off) @ 25°C：39ns/143ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGTH00TS65GC11 is a silicon single IGBT transistor manufactured by ROHM Semiconductor, housed in a TO-247N package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 85 A at 25°C. The device exhibits a typical saturation voltage of 1.6 V and supports a maximum power dissipation of 277 W. Operating within a temperature range of -40°C to +175°C, it includes an integrated fast recovery diode.
Feature Summary
- Field stop trench technology for low saturation voltage
- Integrated fast recovery diode
- High-speed switching capability
Applications
- Power Factor Correction (PFC)
- Solar inverters
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the component status before procurement as some sources indicate this part may be Not Recommended for New Designs (NRND). Confirm RoHS compliance and lead times with authorized distributors. Ensure the specific suffix matches the required packaging configuration for your assembly process.
Selection Notes
Select this component for applications requiring high current handling up to 85 A and robust thermal performance in the TO-247N package. Consider the 2 µs short-circuit withstand time for protection circuitry design. Evaluate the 1.6 V saturation voltage against system efficiency requirements compared to alternative trench IGBTs.
Part Context
This model belongs to the RGTH series of field stop trench IGBTs from ROHM. It is designed for general industrial power conversion applications. The device integrates a fast recovery freewheeling diode, simplifying circuit design for half-bridge configurations commonly found in motor drives and power supplies.
Replacement Considerations
Direct substitutes include other ROHM 650V 85A IGBTs in TO-247N packages such as the RGTV00TS65GC11 or similar trench field-stop devices. Verify pinout compatibility and electrical parameters like Vce(sat) and switching times when cross-referencing with competitor models.
