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The RGTH00TS65GC13 is a single N-channel trench field-stop IGBT manufactured by ROHM Semiconductor. It features a TO-247GE-3 through-hole package and operates with a maximum collector-emitter voltage of 650 V. The device supports a continuous collector current of 85 A at 25°C and handles up to 277 W of power dissipation. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter maximum voltage of ±30 V, and a leakage current of 200 nA. It functions within a temperature range of -40°C to +175°C junction temperature.
Verify the specific suffix GC13 against official datasheets to confirm packaging details and compliance status. Confirm RoHS directives and lead times directly with authorized distributors or the manufacturer before ordering. Ensure the procurement channel provides traceable documentation matching the component specifications.
Select this component when a 650V rating and high current capacity are required for industrial applications. The TO-247GE-3 package facilitates effective heat sinking for high-power dissipation scenarios. Evaluate the 2.1V saturation voltage against system efficiency requirements and ensure the driving circuitry supports the necessary gate voltage levels.
This part belongs to ROHM's RGT series of trench field-stop IGBTs. These devices are engineered to balance low conduction losses with fast switching speeds. The series targets high-efficiency power conversion systems where reliability under high thermal stress is critical for long-term operation.
Direct replacements must match the 650V/85A rating and TO-247GE-3 footprint. Verify pinout compatibility and thermal characteristics. Cross-referencing with other ROHM models like the RGW60TS65GC11 requires careful evaluation of current derating and saturation voltage differences.