RGTH40TK65GC11

$2.69

Description：IGBT TRENCH FS 650V 23A TO-3PFM
Series：-

SKU:1e625efb0fc0 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 23A TO-3PFM
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：23 A
Current - Collector Pulsed (Icm)：80 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
Power - Max：56 W
Switching Energy：-
Input Type：Standard
Gate Charge：40 nC
Td (on/off) @ 25°C：22ns/73ns
Test Condition：400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3PFM, SC-93-3
Supplier Device Package：TO-3PFM
Grade：-
Qualification：-

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RGTH40TK65GC11

Overview

The RGTH40TK65GC11 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Silicon technology and features a Field Stop Trench structure designed for high-speed switching applications. The device is housed in a TO-3PFM-3 through-hole package. Key electrical specifications include a collector-emitter maximum voltage (VCEO) of 650 V and a continuous collector current (Ic) of 20 A at 25°C. The collector-emitter saturation voltage is specified at 1.6 V, with a maximum power dissipation (Pd) of 56 W. The gate-emitter voltage range is -30 V to +30 V, and the leakage current is 200 nA. Operating temperatures span from -40°C to +175°C.

Feature Summary

High-speed switching capability utilizing Field Stop Trench technology
Low collector-emitter saturation voltage for improved efficiency
Robust thermal performance within an extended temperature range

Applications

Power Factor Correction (PFC) circuits
Solar inverters
Uninterruptible Power Supplies (UPS)
Welding equipment
Induction Heating (IH) appliances

Procurement Notes

Verify component authenticity against official ROHM Semiconductor documentation prior to integration. Confirm that the specific suffix GC11 aligns with required packaging and marking standards. Ensure design compatibility with the TO-3PFM-3 thermal and mechanical constraints. Review the datasheet for absolute maximum ratings to prevent operational overstress. Validate RoHS compliance status if environmental regulations apply to the final assembly.

Selection Notes

Select this IGBT for applications requiring fast switching speeds and low conduction losses in the 650V class. The TO-3PFM package suits designs needing robust through-hole mounting and efficient heat dissipation. Consider the 20A current rating relative to peak load requirements. Evaluate thermal management solutions given the 56W power dissipation limit. Compare against alternative trench field stop devices if higher current density or different form factors are necessary.

Part Context

This component belongs to the RGTH series of high-speed IGBTs from ROHM Semiconductor. It is part of the broader family of trench field stop transistors designed for medium-power conversion tasks. The RGTH40TK65GC11 shares architectural similarities with other models in the series but differs in current handling and package configuration. It serves as a critical switching element in modern power electronics infrastructure.